IGBT Modules
Description
IGBT modules consist of many devices in parallel and can have very high current handling capabilities in the order of hundreds of amperes with blocking voltages of 6000 V, equating to hundreds of kilowatts. Rather than using a device physics-based model, SPICE simulates IGBTs using Macromodels, a method that combines an ensemble of components such as FETs and BJTs in a Darlington configuration. An alternative physics-based model is the Hefner model, introduced by Allen Hefner of the NIST. It is a fairly complex model that has shown very good results. Hefner's model is described in a 1988 paper and was later extended to a thermo-electrical model and a version using SABER.
Components
IGBT module is mainly composed by IGBT chip, diode chip, DBC, aluminum wire, Silicone gel, and electrode.
Application
IGBT module is the advanced third generation power module, with working frequency from 1-20 KHZ. It is mainly applied in the main circuit inverter of the transducer and all inverter circuits, namely the DC/AC conversion, such as electric vehicles and servo controller, UPS, switch power supply, chopping power supply, trolley buses, etc.
Features
IGBT module has the features of large input impedance, less drive power and simple control circuit, small switch loss, fast break speed, high working frequency, and large capacity. In deed, it is a composite power component, integrating the advantages of bipolar type power transistors and power MOSFET. The development trend of IGBT module is high voltage, large current, high speed, low pressure drop, high reliability and low cost, especially the development of the high voltage inverter application. It aims to simplify the main circuit and debugging, reduce using devices and the manufacturing cost, and improve reliability.
Manufacturers
The IGBT MODULE we offered mainly from Germany Semikron, IXYS, Infineon, Japan Mitsubishi, Fuji, Sanken, Hitachi, Toshiba , and Switzerland ABB.
IGBT modules consist of many devices in parallel and can have very high current handling capabilities in the order of hundreds of amperes with blocking voltages of 6000 V, equating to hundreds of kilowatts. Rather than using a device physics-based model, SPICE simulates IGBTs using Macromodels, a method that combines an ensemble of components such as FETs and BJTs in a Darlington configuration. An alternative physics-based model is the Hefner model, introduced by Allen Hefner of the NIST. It is a fairly complex model that has shown very good results. Hefner's model is described in a 1988 paper and was later extended to a thermo-electrical model and a version using SABER.
Components
IGBT module is mainly composed by IGBT chip, diode chip, DBC, aluminum wire, Silicone gel, and electrode.
Application
IGBT module is the advanced third generation power module, with working frequency from 1-20 KHZ. It is mainly applied in the main circuit inverter of the transducer and all inverter circuits, namely the DC/AC conversion, such as electric vehicles and servo controller, UPS, switch power supply, chopping power supply, trolley buses, etc.
Features
IGBT module has the features of large input impedance, less drive power and simple control circuit, small switch loss, fast break speed, high working frequency, and large capacity. In deed, it is a composite power component, integrating the advantages of bipolar type power transistors and power MOSFET. The development trend of IGBT module is high voltage, large current, high speed, low pressure drop, high reliability and low cost, especially the development of the high voltage inverter application. It aims to simplify the main circuit and debugging, reduce using devices and the manufacturing cost, and improve reliability.
Manufacturers
The IGBT MODULE we offered mainly from Germany Semikron, IXYS, Infineon, Japan Mitsubishi, Fuji, Sanken, Hitachi, Toshiba , and Switzerland ABB.
